SSM3K35CT

SSM3K35CT TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35CT ○ High-Speed Switching Applications ○ Analog Switch Applications Unit: mm 1.2-V drive Low ON-resistance : Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ±10 V Drain current DC ID Pulse IDP 180 mA 360 Drain power dissipation PD(Note 1) 100 mW Channel temperature Storage temperature Tch 150 °C Tstg −55 to 150 °C JEDEC - Note: Using continuously under heavy loads (e.g. the application of high JEITA - CST3 temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating TOSHIBA 2-1J1B Weight: 0.75 mg (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm2 ) Marking (top view) Polarity mark SD Pin Condition (top view) Polarity mark (on the top) 1 3 2 1. Gate 2. Source...