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SSM3K37CT Dataheets PDF



Part Number SSM3K37CT
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet SSM3K37CT DatasheetSSM3K37CT Datasheet (PDF)

SSM3K37CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K37CT ○ High Speed Switching Applications ○ Analog Switch Applications Unit : mm • 1.5Vdrive • Low ON-resistance RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissi.

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SSM3K37CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K37CT ○ High Speed Switching Applications ○ Analog Switch Applications Unit : mm • 1.5Vdrive • Low ON-resistance RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range VDSS 20 V VGSS ± 10 V ID 200 mA IDP 400 PD(Note1) 100 mW Tch 150 °C Tstg −55 to 150 °C CST3 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA TOSHIBA ― 2-1J1B absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 0.75mg(typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm2) Marking(top view) Polarity mark SU Pin Condition (top view) Polarity mark (on the top) 1 3 2 1. Gate 2. Source 3. Drain *Electrodes: On the bottom 1 Equivalent Circuit 3 1 2 Start of commercial production 2010-11 2014-03-01 SSM3K37CT Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain-source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Drain-Source forward voltage V (BR) DSS V (BR) DSX IDSS IGSS Vth |Yfs| RDS (ON) Ciss Coss Crss ton toff VDSF ID = 1 mA, VGS = 0 V ID = 1 mA, VGS = -10 V VDS = 20 V, VGS = 0 V VGS = ±10 V, VDS = 0 V VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 100 mA (Note2) ID = 100 mA, VGS = 4.5 V (Note2) ID = 50 mA, VGS = 2.5 V (Note2) ID = 20 mA, VGS = 1.8 V (Note2) ID = 10 mA, VGS = 1.5 V (Note2) VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 10 V, ID = 100 mA VGS = 0 to 2.5 V, RG = 50 Ω ID = -200 mA, VGS = 0 V (Note2) 20 12 ⎯ ⎯ 0.35 0.14 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.28 1.65 2.16 2.66 3.07 12 5.5 4.1 18 36 -0.89 ⎯ V ⎯ 1 μA ±1 μA 1.0 V ⎯ S 2.20 3.02 Ω 4.05 5.60 ⎯ ⎯ pF ⎯ ⎯ ns ⎯ -1.2 V Note2: Pulse test Switching Time Test Circuit (a) Test Circuit 2.5 V IN 0V 10 μs RG OUT VDD = 10 V RG = 50Ω Duty ≤ 1% VIN : tr, tf < 5 ns Common source Ta = 25°C VDD (b) VIN (c) VOUT 2.5 V 0V VDD VDS (ON) 10% 90% 90% 10% tr tf ton toff Precaution Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1mA for the SSM3K37CT). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration 2 2014-03-01 Drain current ID (mA) 500 Common source Ta = 25 °C Pulse test 400 ID – VDS 4.5 V 10 V 300 200 100 2.5 V 1.8 V 1.5 V VGS = 1.2 V 0 0 0.2 0.4 0.6 0.8 1.0 Drain-source voltage VDS (V) Drain current ID (mA) SSM3K37CT 1000 100 Ta = 100 °C 10 ID – VGS 1 0.1 0.01 0 − 25 °C 25 °C 1.0 Common source VDS = 3 V Pulse test 2.0 3.0 Gate-source voltage VGS (V) Drain-source ON-resistance RDS (ON) (Ω) RDS (ON) – VGS 6 ID = 100 mA Common source 5 Pulse test 4 3 25 °C 2 Ta = 100 °C 1 − 25 °C 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Drain-source ON-resistance RDS (ON) (Ω) RDS (ON) – ID 6 Common source Ta = 25°C 5 Pulse test 4 1.5 V 1.8 V 3 2.5V 2 VGS = 4.5V 1 0 0 100 200 300 400 500 Drain current ID (mA) RDS (ON) – Ta 5 ID = 10 mA / VGS = 1.5 V 4 20 mA / 1.8 V 50 mA / 2.5 V 3 2 100 mA / 4.5 V 1 Common source Pulse test 0 −50 0 50 100 150 Ambient temperature Ta (°C) Gate threshold voltage Vth (V) Vth – Ta 1.0 Common source VDS =.


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