Document
SSM3K37CT
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K37CT
○ High Speed Switching Applications ○ Analog Switch Applications
Unit : mm
• 1.5Vdrive • Low ON-resistance
RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Power dissipation
Channel temperature
Storage temperature range
VDSS
20
V
VGSS
± 10
V
ID
200
mA
IDP
400
PD(Note1)
100
mW
Tch
150
°C
Tstg
−55 to 150
°C
CST3
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
JEITA TOSHIBA
― 2-1J1B
absolute maximum ratings. Please design the appropriate reliability upon reviewing the
Weight: 0.75mg(typ.)
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm2)
Marking(top view)
Polarity mark
SU
Pin Condition (top view)
Polarity mark (on the top)
1 3
2
1. Gate 2. Source 3. Drain
*Electrodes: On the bottom
1
Equivalent Circuit
3
1
2
Start of commercial production
2010-11 2014-03-01
SSM3K37CT
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max Unit
Drain-source breakdown voltage
Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time Turn-off time
Drain-Source forward voltage
V (BR) DSS V (BR) DSX
IDSS IGSS Vth |Yfs|
RDS (ON)
Ciss Coss Crss ton toff VDSF
ID = 1 mA, VGS = 0 V ID = 1 mA, VGS = -10 V VDS = 20 V, VGS = 0 V VGS = ±10 V, VDS = 0 V VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 100 mA (Note2) ID = 100 mA, VGS = 4.5 V (Note2) ID = 50 mA, VGS = 2.5 V (Note2) ID = 20 mA, VGS = 1.8 V (Note2) ID = 10 mA, VGS = 1.5 V (Note2)
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDD = 10 V, ID = 100 mA VGS = 0 to 2.5 V, RG = 50 Ω ID = -200 mA, VGS = 0 V (Note2)
20 12 ⎯ ⎯ 0.35 0.14 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯
⎯ ⎯ ⎯ ⎯ ⎯ 0.28 1.65 2.16 2.66 3.07 12 5.5 4.1 18 36 -0.89
⎯ V
⎯
1
μA
±1
μA
1.0
V
⎯
S
2.20
3.02 Ω
4.05
5.60
⎯
⎯
pF
⎯
⎯ ns
⎯
-1.2
V
Note2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
2.5 V IN
0V 10 μs
RG
OUT
VDD = 10 V RG = 50Ω Duty ≤ 1%
VIN : tr, tf < 5 ns Common source
Ta = 25°C
VDD
(b) VIN (c) VOUT
2.5 V 0V VDD VDS (ON)
10%
90%
90%
10%
tr
tf
ton
toff
Precaution
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (1mA for the SSM3K37CT). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration
2
2014-03-01
Drain current ID (mA)
500 Common source
Ta = 25 °C
Pulse test 400
ID – VDS
4.5 V
10 V 300
200
100
2.5 V 1.8 V 1.5 V
VGS = 1.2 V
0
0
0.2
0.4
0.6
0.8
1.0
Drain-source voltage VDS (V)
Drain current ID (mA)
SSM3K37CT
1000
100
Ta = 100 °C 10
ID – VGS
1
0.1
0.01 0
− 25 °C
25 °C 1.0
Common source VDS = 3 V Pulse test
2.0
3.0
Gate-source voltage VGS (V)
Drain-source ON-resistance RDS (ON) (Ω)
RDS (ON) – VGS
6 ID = 100 mA
Common source
5
Pulse test
4
3
25 °C
2
Ta = 100 °C
1
− 25 °C
0
0
2
4
6
8
10
Gate-source voltage VGS (V)
Drain-source ON-resistance RDS (ON) (Ω)
RDS (ON) – ID
6 Common source
Ta = 25°C
5
Pulse test
4 1.5 V 1.8 V
3
2.5V
2
VGS = 4.5V 1
0
0
100
200
300
400
500
Drain current ID (mA)
RDS (ON) – Ta
5 ID = 10 mA / VGS = 1.5 V
4
20 mA / 1.8 V
50 mA / 2.5 V
3
2 100 mA / 4.5 V
1
Common source
Pulse test 0
−50
0
50
100
150
Ambient temperature Ta (°C)
Gate threshold voltage Vth (V)
Vth – Ta
1.0 Common source VDS =.