SSM3K15ACT

SSM3K15ACT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15ACT Load Switching Applications 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range VDSS 30 V VGSS ± 20 V ID 100 mA IDP 400 PD(Note 1) 100 mW Tch 150 °C Tstg −55 to 150 °C CST3 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ― reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA ― absolute maximum ratings. TOSHIBA 2-1J1B Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Weight: 0.75 mg (typ.) Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm2) Marking (Top View) Polarity mark DI Pin Condition (Top View) Polarity mark (on the top) 1 3 2 1. Gate 2. Source 3. Drain *Electrodes: On the bottom Equivalent Circuit 3 1 2 Start of comme...