SSM3K15AMFV

SSM3K15AMFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15AMFV Load Switching Applications 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm 1.2±0.05 0.8±0.05 0.22±0.05 0.32±0.05 0.13±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain dissipation Channel temperature Storage temperature range Symbol Rating Unit VDSS 30 V VGSS ± 20 V ID 100 mA IDP 400 PD(Note 1) 150 mW Tch 150 °C Tstg −55 to 150 °C 1.2±0.05 0.8±0.05 0.4 0.4 1 3 2 0.5±0.05 VESM 1.Gate 2.Source 3.Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA TOSHIBA ― 2-1L1B absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 1.5 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.585mm2) 0.5mm 0.45mm 0.45mm 0.4mm Marking 3 DI 1 2 Equivalent Circuit (top...