SSM3K36TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K36TU
○ High-Speed Switching Applications
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SSM3K36TU
TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type
SSM3K36TU
○ High-Speed Switching Applications
1.5-V drive Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V)
: Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V)
Absolute Maximum Ratings (Ta = 25˚C)
2.0±0.1 0.65±0.05
Unit: mm
2.1±0.1 1.7±0.1
0.3-+00..015
1
2
3
0.166±0.05
0.7±0.05
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS
20
V
Gate–source voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
500 mA
1000
Drain power dissipation
PD (Note 1)
500
mW
PD (Note 2)
800
UFM JEDEC
1: Gate 2: Source 3: Drain
―
Channel temperature Storage temperature
Tch
150
°C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-2U1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 6.6 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within
the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note1: Mounted on an FR4 board (25.4 mm × 25.4 ...