SSM3K44FS

SSM3K44FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44FS High Speed Switching Applications Analog Switching Applications Unit: mm Compact package suitable for high-density mounting Low ON-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V DC Drain current ID 100 mA Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of JEITA ― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2H1B Weight: 2.4 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 0.36mm2 ×3) Marking Equivalent Circuit 3 3 NT 1 2 1 2 Handling Precaution When handling individual devices (whi...