SSM5P15FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM5P15FE
High Speed Switching Applications Analog...
SSM5P15FE
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type
SSM5P15FE
High Speed Switching Applications Analog Switch Applications
Small package
Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
−100 mA
IDP
−200
Power dissipation (Ta = 25°C)
PD (Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm2 × 5)
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2P1B
Weight: 0.003g(typ.)
0.3 mm
0.45 mm
Marking
5
4
Equivalent Circuit (top view)
5
4
DQ
Q1
Q2
1
2
3
1
2
3
Handling Precaution
When handling indivi...