SSM5P16FU

SSM5P16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI) SSM5P16FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V) (Q1, Q2 Common) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD(Note1) Tch Tstg Rating −20 ±10 −100 −200 200 150 −55~150 Unit V V mA mW °C °C 1: Gate1 2: Source 3: Gate2 4: Drain2 5: Drain1 JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 2-2L1B temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 6.2 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Total rating Marking 5 4 Equivalent Circuit (top view) 5 4 DT 1 2 3 Q1 Q2 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circ...