SSM6N15AFE

SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) 1.6±0.05 1.2±0.05 Unit: mm 1.6±0.05 (Q1, Q2 Common) 5 4 3 Characteristics Drain-Source voltage Gate-Source voltage Drain current Power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 400 150 150 −55 to 150 Unit V mA 1.Source1 mW °C °C 2.Gate1 4.Source2 5.Gate2 6.Drain1 ES6 JEDEC 3.Drain2 ― Using continuously under heavy loads (e.g. the application of JEITA ― high temperature/current/voltage and the significant change in TOSHIBA 2-2N1D temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 3.0 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) 0.3 mm Note: Marking 6 5 4 0.45 mm Equivalent Circuit (top view) 6 5 4 DI 1 2 3 1 Q1 Q2 2 3 1 2010-11-22 0.12±0.05 V 0.55±0....