Document
SSM6N15FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N15FE
High Speed Switching Applications Analog Switching Applications
• • Small package Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Unit: mm
(Q1, Q2 Common)
Drain-Source voltage Gate-Source voltage Drain current
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 200 150 150 −55~150 Unit V V mA mW °C °C
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 6)
0.3 mm
Note:
1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 JEDEC JEITA TOSHIBA Weight: 3mg (typ.) ― ― 2-2N1D
Marking
6 5 4
0.45 mm
Equivalent Circuit (top view)
6 5 4
DP
1 2 3 1
Q1 Q2
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
SSM6N15FE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) Ciss Crss Coss ton toff VDD = 5 V, ID = 10 mA, VGS = 0~5 V VDS = 3 V, VGS = 0, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V ID = 10 mA, VGS = 2.5 V Min ⎯ 30 ⎯ 0.8 25 ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 2.2 4.0 7.8 3.6 8.8 50 180 Max ±1 ⎯ 1 1.5 ⎯ 4.0 7.0 ⎯ ⎯ Unit μA V μA V mS Ω pF pF pF ns
⎯ ⎯
⎯
⎯ ⎯ ⎯
Switching Time Test Circuit
(a) Test circuit
5V 0 10 μs VDD = 5 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C OUT IN 50 Ω RL 0V 10%
(b) VIN
5V 90%
VDD
(c) VOUT
VDD
10% 90% tr ton tf toff
VDS (ON)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device.
2
2007-11-01
SSM6N15FE
(Q1, Q2 Common)
ID – VDS
250 Common Source 200 10 4 3 Ta = 25°C 100 1000 Common Source VDS = 3 V Ta = 100°C 10 25°C 1 −25°C
ID – VGS
Drain current ID (mA)
2.7 150 2.5 100 2.3 50 VGS = 2.1 V 0 0 0.5 1 1.5 2
Drain current ID (mA)
0.1
0.01 0
1
2
3
4
Drain-source voltage
VDS (V)
Gate-source voltage
VGS (V)
RDS (ON) – ID
10 Common Source Ta = 25°C 8 5 6
RDS (ON) – VGS
Common Source ID = 10 mA
Drain-source on resistance RDS (ON) (Ω)
Drain-source on resistance RDS (ON) (Ω)
4 Ta = 100°C 25°C 2 −25°C 1
6
VGS = 2.5 V
3
4 4V 2
0 0
40
80
120
160
200
0 0
2
4
6
8
10
Drain current ID (mA)
Gate-source voltage
VGS (V)
RDS (ON) – Ta
8 7 Common Source ID = 10 mA 2 1.8 Common Source ID = 0.1 mA VDS = 3 V
Vth – Ta
Vth (V) Gate threshold voltage
75 100 125 150 VGS = 2.5 V 4V 0 25 50
Drain-source on resistance RDS (ON) (Ω)
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25
6 5 4 3 2 1 0 −25
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
3
2007-11-01
SSM6N15FE
(Q1, Q2 Common)
⎪Yfs⎪ – ID
1000 Common Source 500 V DS = 3 V 300 Ta = 25°C 250 Common Source VGS = 0 V Ta = 25°C D 150 IDR S 100
IDR – VDS
(mA) Drain reverse current IDR
Forward transfer admittance ⏐Yfs⏐ (mS)
200
100 50 30
G
10 5 3
50
1 0
10
100
1000
0 0
−0.2
−0.4
−0.6
−0.8
−1
−1.2
−1.4
Drain current ID (mA)
Drain-source voltage
VDS (V)
t – ID
10000 5000 3000 toff 1000 500 300 tf Common Source VDD = 5 V VGS = 0~5 V Ta = 25°C 10000 5000 3000
t – ID
Common Source VDD = 3 V VGS = 0~2.5 V Ta = 25°C toff 1000 500 300 ton 100 50 30 tr tf
Switching time t (ns)
100 50 30 ton tr
10 0.1
Switching time t (ns)
1 10 100
10 0.1
1
10
100
Drain current ID (mA)
Drain current ID (mA)
C.