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SSM6N15FE Dataheets PDF



Part Number SSM6N15FE
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description MOSFET
Datasheet SSM6N15FE DatasheetSSM6N15FE Datasheet (PDF)

SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Analog Switching Applications • • Small package Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Unit: mm (Q1, Q2 Common) Drain-Source voltage Gate-Source voltage Drain current Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 200 150 150 −55~150 Unit V V mA mW °C °C Drai.

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SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Analog Switching Applications • • Small package Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Unit: mm (Q1, Q2 Common) Drain-Source voltage Gate-Source voltage Drain current Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 200 150 150 −55~150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 6) 0.3 mm Note: 1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 JEDEC JEITA TOSHIBA Weight: 3mg (typ.) ― ― 2-2N1D Marking 6 5 4 0.45 mm Equivalent Circuit (top view) 6 5 4 DP 1 2 3 1 Q1 Q2 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM6N15FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) Ciss Crss Coss ton toff VDD = 5 V, ID = 10 mA, VGS = 0~5 V VDS = 3 V, VGS = 0, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V ID = 10 mA, VGS = 2.5 V Min ⎯ 30 ⎯ 0.8 25 ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 2.2 4.0 7.8 3.6 8.8 50 180 Max ±1 ⎯ 1 1.5 ⎯ 4.0 7.0 ⎯ ⎯ Unit μA V μA V mS Ω pF pF pF ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Switching Time Test Circuit (a) Test circuit 5V 0 10 μs VDD = 5 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C OUT IN 50 Ω RL 0V 10% (b) VIN 5V 90% VDD (c) VOUT VDD 10% 90% tr ton tf toff VDS (ON) Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM6N15FE (Q1, Q2 Common) ID – VDS 250 Common Source 200 10 4 3 Ta = 25°C 100 1000 Common Source VDS = 3 V Ta = 100°C 10 25°C 1 −25°C ID – VGS Drain current ID (mA) 2.7 150 2.5 100 2.3 50 VGS = 2.1 V 0 0 0.5 1 1.5 2 Drain current ID (mA) 0.1 0.01 0 1 2 3 4 Drain-source voltage VDS (V) Gate-source voltage VGS (V) RDS (ON) – ID 10 Common Source Ta = 25°C 8 5 6 RDS (ON) – VGS Common Source ID = 10 mA Drain-source on resistance RDS (ON) (Ω) Drain-source on resistance RDS (ON) (Ω) 4 Ta = 100°C 25°C 2 −25°C 1 6 VGS = 2.5 V 3 4 4V 2 0 0 40 80 120 160 200 0 0 2 4 6 8 10 Drain current ID (mA) Gate-source voltage VGS (V) RDS (ON) – Ta 8 7 Common Source ID = 10 mA 2 1.8 Common Source ID = 0.1 mA VDS = 3 V Vth – Ta Vth (V) Gate threshold voltage 75 100 125 150 VGS = 2.5 V 4V 0 25 50 Drain-source on resistance RDS (ON) (Ω) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25 6 5 4 3 2 1 0 −25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3 2007-11-01 SSM6N15FE (Q1, Q2 Common) ⎪Yfs⎪ – ID 1000 Common Source 500 V DS = 3 V 300 Ta = 25°C 250 Common Source VGS = 0 V Ta = 25°C D 150 IDR S 100 IDR – VDS (mA) Drain reverse current IDR Forward transfer admittance ⏐Yfs⏐ (mS) 200 100 50 30 G 10 5 3 50 1 0 10 100 1000 0 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 Drain current ID (mA) Drain-source voltage VDS (V) t – ID 10000 5000 3000 toff 1000 500 300 tf Common Source VDD = 5 V VGS = 0~5 V Ta = 25°C 10000 5000 3000 t – ID Common Source VDD = 3 V VGS = 0~2.5 V Ta = 25°C toff 1000 500 300 ton 100 50 30 tr tf Switching time t (ns) 100 50 30 ton tr 10 0.1 Switching time t (ns) 1 10 100 10 0.1 1 10 100 Drain current ID (mA) Drain current ID (mA) C.


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