SSM6N36TU

SSM6N36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36TU ○ High-Speed Switching Applications 1.5-V drive Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) 0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1 Unit: mm : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V) 2 3 5 4 Characteristics Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ± 10 500 1000 500 150 −55 to 150 Unit V V mA mW °C °C 0.7±0.05 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 1.Source1 4.Source2 5.Gate2 6.Drain1 UF6 JEDEC JEITA 2.Gate1 3.Drain2 ― ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2T1B temperature/current/voltage and the significant change in Weight: 7.0 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Marking 6 5 4...