SSM6L36TU
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L36TU
○ High-Speed Switching Applications
...
SSM6L36TU
TOSHIBA Field-Effect
Transistor Silicon N / P Channel MOS Type
SSM6L36TU
○ High-Speed Switching Applications
1.5-V drive
0.65 0.65
Unit: mm
2.1±0.1 1.7±0.1
Ron = 1.14Ω (max) (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) Ron = 0.63Ω (max) (@VGS = 5.0 V) Ron = 2.70Ω (max) (@VGS = -1.8 V) Ron = 1.60Ω (max) (@VGS = -2.8 V) Ron = 1.31Ω (max) (@VGS = -4.5 V)
2 3
5 4
0.7±0.05
Q2 P-ch: Ron = 3.60Ω (max) (@VGS = -1.5 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain–source voltage Gate–source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating 20 ±10 500 1000 Unit V V mA
1.Source1 4.Source2 5.Gate2 2.Gate1
UF6
JEDEC JEITA
3.Drain2
6.Drain1
2-2T1B
TOSHIBA
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain–source voltage Gate–source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating -20 ±8 -330 -660 Unit V V mA
Weight: 7.0 mg (typ.)
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)
Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD(Note 1) Tch Tstg Rating 500 150 −55 to 150 Unit mW °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum rati...
