MOSFETs Silicon N-Channel MOS (DTMOS)
TK39A60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain...
MOSFETs Silicon N-Channel MOS (DTMOS)
TK39A60W
1. Applications
Switching Voltage
Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.9 mA)
3. Packaging and Internal Circuit
TK39A60W
1: Gate 2: Drain 3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque
(Tc = 25) (t = 1.0 s)
(Note 1) (Note 1)
(Note 2)
(Note 1) (Note 1)
VDSS VGSS
ID IDP PD EAS IAR IDR IDRP Tch Tstg VISO(RMS) TOR
600 ±30 38.8 155 50 608 9.7 38.8 155 150 -55 to 150 2000 0.6
V A W mJ A
V Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concep...