TK5A65DA
MOSFETs Silicon N-Channel MOS (π-MOS)
TK5A65DA
1. Applications
• Switching Voltage Regulators
2. Features
(1...
TK5A65DA
MOSFETs Silicon N-Channel MOS (π-MOS)
TK5A65DA
1. Applications
Switching Voltage
Regulators
2. Features
(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.34 Ω (typ.) High forward transfer admittance: |Yfs| = 3.1 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate (G) 2: Drain (D) 3: Source (S)
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Channel temperature Storage temperature (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 650 ±30 4.5 18 35 194 4.5 3.5 150 -55 to 150 W mJ A mJ A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimate...