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TK13A65D Dataheets PDF



Part Number TK13A65D
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet TK13A65D DatasheetTK13A65D Datasheet (PDF)

TK13A65D MOSFETs Silicon N-Channel MOS (π-MOS) TK13A65D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless ot.

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TK13A65D MOSFETs Silicon N-Channel MOS (π-MOS) TK13A65D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Channel temperature Storage temperature (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 650 ±30 13 52 50 706 13 5.0 150 -55 to 150 W mJ A mJ  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1 2010-09 2013-12-25 Rev.2.0 TK13A65D 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 2.5 62.5 Unit /W Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 7.4 mH, RG = 25 Ω, IAR = 13 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2013-12-25 Rev.2.0 TK13A65D 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Forward transfer admittance Symbol IGSS IDSS V(BR)DSS Vth RDS(ON) |Yfs| Test Condition VGS = ±30 V, VDS = 0 V VDS = 650 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6.5 A VDS = 10 V, ID = 6.5 A Min   650 2.0  1.9 Typ.     0.4 7.5 Max ±1 10  4.0 0.47  Ω S V Unit µA 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Ciss Crss Coss tr ton tf toff See Figure 6.2.1. Test Condition VDS = 25 V, VGS = 0 V, f = 1 MHz Min        Typ. 2600 11 280 50 100 25 150 Max        ns Unit pF Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain charge Symbol Qg Qgs Qgd Test Condition VDD ≈ 400 V, VGS = 10 V, ID = 13 A Min    Typ. 45 28 17 Max    Unit nC 6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Reverse drain current (DC) Reverse drain current (pulsed) Diode forward voltage Reverse recovery time Reverse recovery charge (Note 1) (Note 1) Symbol IDR IDRP VDSF trr Qrr   IDR1 = 13 A, VGS = 0 V IDR = 13 A, VGS = 0 V -dIDR/dt = 100 A/µs Test Condition Min      Typ.    1400 16 Max 13 52 -1.7   V ns µC Unit A 3 2013-12-25 Rev.2.0 TK13A65D 7. Marking (Note) Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 4 2013-12-25 Rev.2.0 TK13A65D 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 |Yfs| - ID Fig. 8.6 RDS(ON) - ID 5 2013-12-25 Rev.2.0 TK13A65D Fig. 8.7 RDS(ON) - Ta Fig. 8.8 IDR - VDS Fig. 8.9 C - VDS Fig. 8.10 Vth - Ta Fig. 8.11 PD - Tc (Guaranteed Maximum) Fig. 8.12 Dynamic Input/Output Characteristics 6 2013-12-25 Rev.2.0 TK13A65D Fig. 8.13 rth/Rth(ch-c) - tw (Guaranteed Maximum) Fig. 8.14 Safe Operating Area (Guaranteed Maximum) Fig. 8.15 EAS - Tch (Guaranteed Maximum) Fig. 8.16 Test Circuit/Waveform Not.


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