TK12J55D

TK12J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12J55D Switching Regulator Applications 15.9 MAX. Unit: mm Ф3.2 ± 0.2 1.0 4.5 9.0 2.0 3.3 MAX. 2.0 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 550 ±30 12 48 190 317 12 19 150 −55 to 150 Unit V V A W mJ A mJ °C °C 1.0 ＋0.3 －0.25 5.45 ± 0.2 1.8 MAX. ＋0.3 0.6 －0.1 5.45 ± 0.2 4.8 MAX. 2.8 1 2 3 Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1. Gate 2. Drain(heat sink) 3. Source JEDEC JEITA TOSHIBA ⎯ SC-65 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Thermal resistance, channel to case Thermal re...