2SK4207
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK4207
Swiching Regulator Applications
15...
2SK4207
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK4207
Swiching
Regulator Applications
15.9max. Ф3.2±0.2 1.0 4.5 9.0 4.8max. 1 2 3
Unit: mm
z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z High forward transfer admittance:|Yfs| = 11 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
2.0
3.3max.
1.0 -0.25
+0.3
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg
Rating 900 900 ±30 13 39 150 491 13 15 150 −55 to 150
Unit
5.45±0.2 5.45±0.2
V V V A A W mJ A mJ °C °C
1.8max. 0.6-0.1
+0.3
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1: GATE 2: DRAIN (HEATSINK) 3: SOURCE JEDEC JEITA TOSHIBA ― SC-65 2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data...