2SK4207

2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK4207 Swiching Regulator Applications 15.9max. Ф3.2±0.2 1.0 4.5 9.0 4.8max. 1 2 3 Unit: mm z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z High forward transfer admittance:|Yfs| = 11 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) 2.0 3.3max. 1.0 －0.25 ＋0.3 Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 13 39 150 491 13 15 150 −55 to 150 Unit 5.45±0.2 5.45±0.2 V V V A A W mJ A mJ °C °C 1.8max. 0.6－0.1 ＋0.3 Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: GATE 2: DRAIN (HEATSINK) 3: SOURCE JEDEC JEITA TOSHIBA ― SC-65 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data...