2SK4200LS

Ordering number : ENA1333 2SK4200LS SANYO Semiconductors DATA SHEET 2SK4200LS Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *4 Avalanche Current *5 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature Tc=25°C (SANYO’s ideal heat dissipation condition*3) PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition*3) Conditions Ratings 650 ±30 4 3.7 16 2.0 30 150 --55 to +150 47 4 Unit V V A A A W W °C °C mJ A Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=5mH, IAV=4A *5 L≤5mH, single pulse Marking : K4200 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, offic...