2SK4203LS

Ordering number : ENA1289 2SK4203LS SANYO Semiconductors DATA SHEET 2SK4203LS Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 45 ±20 18 72 2.0 22 150 --55 to +150 28 18 Unit V V A A W W °C °C mJ A Note : *1 VDD=20V, L=100μH, IAV=18A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0V VDS=45V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 Ratings min 45 1 ±10 2.6 typ max Unit V μA μA V Marking : K4203 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, ae...