TK30A06J3A

TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ) TK30A06J3A Switching Regulator Applications z z z z Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 34 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 30 90 25 40 30 2.5 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test repo...