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TK40A10J1 Dataheets PDF



Part Number TK40A10J1
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description MOSFET
Datasheet TK40A10J1 DatasheetTK40A10J1 Datasheet (PDF)

TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK40A10J1 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 76nC (typ.) Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 90 S Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate .

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TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK40A10J1 Switching Regulator Applications • • • • • Unit: mm Small gate charge: Qg = 76nC (typ.) Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 90 S Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 100 ±20 40 160 40 202 40 2.4 150 −55 to 150 Unit V V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit Internal Connection 2 1 °C/W °C/W 3 Note 1: Ensure that the channel and lead temperatures do not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C, L = 200 μH, IAR = 40 A , RG = 1Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic- sensitive device. Handle with care. 1 http://store.iiic.cc/ 2009-09-29 TK40A10J1 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ID = 20 A VOUT RL = 2.5Ω VDS = 10V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 20A VGS = 10 V, ID = 20A VDS = 10 V, ID = 20 A Min ⎯ ⎯ 100 60 1.1 ⎯ ⎯ 45 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 13 11.5 90 4300 230 790 14 Max ±10 10 ⎯ ⎯ 2.3 17 15 ⎯ ⎯ ⎯ pF Unit μA μA V V mΩ S ⎯ 10 V ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Turn-ON time Switching time Fall time ton VGS 0V 22 4.7 Ω tf VDD ∼ − 50 V Duty ≤ 1%, tw = 10 μs VDD ∼ − 80 V, VGS = 5 V, ID = 40A VDD ∼ − 80 V, VGS = 10 V, ID = 40A VDD ∼ − 80 V, VGS = 10 V, ID = 40A 24 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge Gate switch charge toff 115 44 76 11 21 24 Qg Qgs1 Qgd QSW ⎯ ⎯ Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 40 A, VGS = 0 V IDR = 40 A, VGS = 0 V, dIDR/dt = 50 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ −0.9 55 63 Max 40 160 −1.2 ⎯ ⎯ Unit A A V ns nC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. K40A10J 1 Part No. (or abbreviation code) Lot No. Note 4 2 http://store.iiic.cc/ 2009-09-29 TK40A10J1 ID – VDS 50 COMMON SOURCE Tc = 25°C PULSE TEST 40 8 10 6 3.3 4 160 3.5 COMMON SOURCE Tc = 25°C PULSE TEST 10 ID – VDS 4 3.8 8 6 (A) (A) DRAIN CURRENT ID 120 DRAIN CURRENT ID 30 3.1 3 80 3.5 20 3.3 40 VGS = 3V 0 10 VGS = 2.8V 0 0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID – VGS COMMON SOURCE VDS = 10V PULSE TEST VDS – VGS VDS (V) 1 COMMON SOURCE Tc = 25°C PULSE TEST 200 (A) 160 0.8 DRAIN CURRENT ID 120 DRAIN-SOURCE VOLTAGE 0.6 ID = 40 A 0.4 80 25 40 100 20 0.2 10 Tc = −55°C 0 0 1 2 3 4 5 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS .


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