TPC8221-H

MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8221-H 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate change: QSW = 3.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPC8221-H SOP-8 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain 1 2011-05-10 Rev.2.0 TPC8221-H 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±20 Drain current (DC) (Note 1) ID 6 A Drain current (pulsed) Power dissipation (single operation) (t = 10 s) (Note 1) (Note 2), (Note 4) IDP PD(1) 24 1.5 W Power dissipation (per device for dual (t = 10 s) (Note 2), (Note 5) PD(2) 1.1 operation) Power dissipation (single operation) (t = 10 s) (Note 3), (Note 4) PD(1) 0.75 Power dissipation (per device for dual operation) (t = 10 s) (Note 3), (Note 5) PD(2) 0.45 Single-pulse avalanche energy Avalanche current (Note 6) EAS IAR 46 mJ 6 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause t...