TPCA8008-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)
TPCA8008-H
High Speed Switching App...
TPCA8008-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)
TPCA8008-H
High Speed Switching Applications Switching
Regulator Applications DC/DC Converter Applications
6.0±0.3
Unit: mm
0.5±0.1 1.27 8 0.4±0.1 5 0.05 M A
Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.7 nC (typ.)
5.0±0.2
0.15±0.05
1 0.95±0.05
4
0.595 A
High forward transfer admittance: |Yfs| = 3.3S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
5.0±0.2
S 1 4
0.6±0.1
4.25±0.2
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR
Rating 250 250 ±20 4 8 45 2.8
Unit
8
V V V A W W
5 0.8±0.1
1, 2, 3 : SOURCE 4 : GATE 5, 6, 7, 8 : DRAIN
JEDEC JEITA TOSHIBA
― ― 2-5Q1A
Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a)
Drain power dissipation Drain power dissipation
Weight: 0.069 g (typ.)
Drain power dissipation
(t = 10 s) (Note 2b)
1.6
W
Circuit Configuration
8 7 6 5
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range
11 4 4.5 150 −55 to 150
mJ A mJ °C °C
EAR Tch Tstg
1
2
3
3.5±0.2
Absolute Maximum Ratings (Ta = 25°C)
1.1±0.2
0.05 S
0.166±0.05
Low drain-source ON-resistance: RDS (ON) = 0.47Ω (typ.)
4
Note: For Notes 1 to...
