TPCA8039-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPCA8039-H
High-Efficiency DC-DC Conve...
TPCA8039-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPCA8039-H
High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
1.27 0.4 ± 0.1
8
0.05 M A
5
6.0 ± 0.3 5.0 ± 0.2
Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 8.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 99 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
0.95 ± 0.05
0.15 ± 0.05
0.166 ± 0.05
1
4
0.595
A
5.0 ± 0.2
0.05 S S
1
4
1.1 ± 0.2
0.6 ± 0.1
3.5 ± 0.2
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1) Pulsed (Note 1)
Drain power dissipation (Tc = 25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol VDSS VDGR VGSS
ID IDP PD PD
PD
EAS IAR EAR Tch Tstg
Rating
Unit
30
V
30
V
±20
V
34 A
102
45
W
2.8
W
1.6
W
150
mJ
34
A
0.19
mJ
150
°C
−55 to 150
°C
4.25 ± 0.2
0.8 ± 0.1
8
5
1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circui...
