TPCC8003-H

TPCC8003-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCC8003-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.3 mΩ (typ.) ( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 33 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR (Tc = 25℃) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 ±20 13 39 22 1.9 Unit V V V A W W 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE Pulsed (Note 1) (Tc = 25℃) (t = 10 s) (Note 2a) Drain power dissipation Drain power dissipation Drain power dissipation (t = 10 s) (Note 2b) 0.7 W JEDEC JEITA ⎯ ⎯ 2-3X1A Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy 44 13 1.12 150 −55 to 150 mJ A mJ °C °C TOSHIBA Weight: 0.02 g (typ.) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause ...