TPCP8203
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ)
TPCP8203
Portable Equipment Applications ...
TPCP8203
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (U-MOSⅢ)
TPCP8203
Portable Equipment Applications Motor Drive Applications DC/DC Converters
Lead (Pb)-free Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 31 mΩ (typ.) High forward transfer admittance: |Yfs| = 8.6 S (typ.) Low leakage current: IDSS = 10 μA (max)(VDS = 40 V) Enhancement model: Vth = 1.3 to 2.5V
(VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC Pulse
(Note 1) (Note 1)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Single-pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
Symbol VDSS VDGR VGSS ID IDP PD (1)
PD (2)
PD (1)
PD (2) EAS IAR
EAR
Tch Tstg
Rating
Unit
40
V
40
V
±20
V
4.7 A
18.8
1.48
1.23 W
0.58
0.36
10.6
mJ
4.7
A
0.12
mJ
150
°C
−55 to 150 °C
Note: For Notes 1 to 6, see the next page. This
transistor is an electrostatic-sensitive device. Handle with care.
0.33±0.05
0.05 M A
8
5
Unit: mm
2.4±0.1 2.8±0.1
0.475 1
4
0.65
2.9±0.1
S
0.025 S 0...
