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AP2302GN-HF Dataheets PDF



Part Number AP2302GN-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-channel Enhancement mode Power MOSFET
Datasheet AP2302GN-HF DatasheetAP2302GN-HF Datasheet (PDF)

AP2302GN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Small package outline ▼ Surface mount package ▼ RoHS Compliant S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 85mΩ 3.2A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parame.

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AP2302GN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Small package outline ▼ Surface mount package ▼ RoHS Compliant S SOT-23 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 85mΩ 3.2A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 20 +12 3.2 2.6 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W Data and specifications subject to change without notice 1 200902046 AP2302GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 6 4.4 0.6 1.9 5.2 37 15 5.7 145 100 50 5.3 Max. Units 85 115 1.2 1 10 +100 8 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.1A VDS=VGS, ID=250uA VDS=5V, ID=3.6A VDS=20V, VGS=0V Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Drain-Source Leakage Current (Tj=70 C) VDS=20V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 VGS=+12V, VDS=0V ID=3.6A VDS=10V VGS=4.5V VDS=10V ID=3.6A RG=6Ω,VGS=5V RD=2.8Ω VGS=0V VDS=10V f=1.0MHz f=1.0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V 1 Min. - Typ. - Max. Units 1 10 1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 IS=1.6A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN.


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