N-channel Enhancement mode Power MOSFET
Advanced Power Electronics Corp.
AP2322GN-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Suppor...
Description
Advanced Power Electronics Corp.
AP2322GN-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Supports 1.8V Gate Drive Surface Mount Device RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
20V 90mΩ 2.5A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2322GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as voltage conversion or switch applications.
D
S SOT-23 G
Absolute Maximum Ratings
Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 20 ±8
Units V V A A A W °C °C
2.5
2.0 10 0.833 -55 to 150 -55 to 150
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 150 Unit °C/W
Ordering Information
AP2322GN-HF-3TR : in RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel
©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
201009173-3
1/5
Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDS...
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