N-channel Enhancement mode Power MOSFET
AP2308GEN-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Capable of 2.5V Gate Drive ▼ Lower Gate Charge ▼ F...
Description
AP2308GEN-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Capable of 2.5V Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free
SOT-23 D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
S G
20V 600mΩ 1.2A
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The SOT-23 package is widely used for commercial-industrial applications.
D G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current
1 3 3
Rating 20 +8 1.2 1 3.6 0.69 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 180
Unit ℃/W 1 201204255
Data and specifications subject to change without notice
AP2308GEN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.1 1 1.2 0.4 0.3 17 36 76 73 37 17 13
Max. Units 600 2 1.25 1 10 +30 2 60 V V/℃ mΩ Ω V S uA uA uA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)...
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