DatasheetsPDF.com

AP1002BMX-3 Dataheets PDF



Part Number AP1002BMX-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP1002BMX-3 DatasheetAP1002BMX-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP1002BMX-3 N-channel Enhancement-mode Power MOSFET RoHS-compliant, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm ) D BV DSS RDS(ON) G S 30V 1.8mΩ 32A ID Description The AP1002BMX-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability. The GreenFET package is compatible with existing solde.

  AP1002BMX-3   AP1002BMX-3


Document
Advanced Power Electronics Corp. AP1002BMX-3 N-channel Enhancement-mode Power MOSFET RoHS-compliant, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm ) D BV DSS RDS(ON) G S 30V 1.8mΩ 32A ID Description The AP1002BMX-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability. The GreenFET package is compatible with existing soldering techniques and is ideal for power applications, especially for high-frequency/high-efficiency DC-DC converters. TM GreenFETTM S D G S D Absolute Maximum Ratings MX Symbol VDS VGS ID at TA=25°C ID at TA= 70°C ID at TC=25°C IDM C PD at TA=25° PD at TA=70°C C PD at TC=25° EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 3 Rating 30 ±20 32 25 180 250 2.8 1.8 89 5 Units V V A A A A W W W mJ A °C °C Continuous Drain Current Pulsed Drain Current 1 3 3 4 Continuous Drain Current Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current 4 Single Pulse Avalanche Energy Storage Temperature Range 28.8 24 -40 to 150 -40 to 150 Operating Junction Temperature Range Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case4 Maximum Thermal Resistance, Junction-ambient 3 1.4 45 °C/W °C/W Ordering Information AP1002BMX-3TR RoHS-compliant halogen-free GreenFET TM MX package, shipped on tape and reel (4800 pcs/reel) ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 201008094-3 1/5 Advanced Power Electronics Corp. Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 AP1002BMX-3 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=32A VGS=4.5V, ID=25A Min. 30 1.2 45 - Typ. 1.3 1.9 80 29 6.5 14 14 90 36 11 3350 1000 320 1.3 Max. Units 1.8 3 2.35 1 150 ±100 46 5360 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=250uA VDS=10V, ID=25A VDS=24V, VGS=0V VGS= ±20V, VDS=0V ID=25A VDS=15V VGS=4.5V VDS=16V ID=25A RG= 1.2Ω , VGS= 10 V RD= 0.64Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Drain-Source Leakage Current (T j=125 C) VDS=24V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Test Conditions 1 Min. - Typ. 55 75 Max. Units 110 250 1 83 113 A A V ns nC Pulsed Source Current (Body Diode) Forward On Voltage 2 IS=25A, VGS=0V IS=25A, VGS=0V, dI/dt=100A/µs - Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test 3.Surface mounted on 1 in copper pad of FR4 board. 4.TC measured with thermocouple mounted to top (Drain) of part. o 5.Starting Tj=25 C, L=0.1mH, RG=25Ω 2 THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/5 Advanced Power Electronics Corp. Typical Electrical Characteristics 240 200 AP1002BMX-3 T A =25 o C 200 ID , Drain Current (A) 160 ID , Drain Current (A) 10V 7.0V 6.0V 5.0V V G =4.0V T A =150 C 160 o 10V 7.0V 6.0V 5.0V V G =4.0V 120 120 80 80 40 40 0 0.0 1.0 2.0 3.0 4.0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3 2 Fig 2. Typical Output Characteristics I D =25A T A =25°C 2.6 I D =32A V G =10V Normalized RDS(ON) 1.6 RDS(ON) (mΩ ) 2.2 1.2 1.8 0.8 1.4 1 2 4 6 8 10 0.4 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage 1.4 Fig 4. Normalized On-Resistance vs. Junction Temperature 30 1.2 Normalized VGS(th) (V) 20 T j =150 o C T j =25 o C 1 IS(A) 0.8 10 0.6 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 0.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/5 Advanced Power Elec.


CM6307A AP1002BMX-3 AP0203GMT-HF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)