Document
Advanced Power Electronics Corp.
AP1002BMX-3
N-channel Enhancement-mode Power MOSFET
RoHS-compliant, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm )
D
BV DSS RDS(ON)
G S
30V 1.8mΩ 32A
ID
Description
The AP1002BMX-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability. The GreenFET package is compatible with existing soldering techniques and is ideal for power applications, especially for high-frequency/high-efficiency DC-DC converters.
TM
GreenFETTM
S D G S D
Absolute Maximum Ratings
MX
Symbol VDS VGS ID at TA=25°C ID at TA= 70°C ID at TC=25°C IDM C PD at TA=25° PD at TA=70°C C PD at TC=25° EAS IAR TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
3
3
Rating 30 ±20 32 25 180 250 2.8 1.8 89
5
Units V V A A A A W W W mJ A °C °C
Continuous Drain Current Pulsed Drain Current
1 3 3 4
Continuous Drain Current Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current
4
Single Pulse Avalanche Energy Storage Temperature Range
28.8 24 -40 to 150 -40 to 150
Operating Junction Temperature Range
Thermal Data
Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case4 Maximum Thermal Resistance, Junction-ambient
3
1.4
45
°C/W °C/W
Ordering Information
AP1002BMX-3TR RoHS-compliant halogen-free GreenFET
TM
MX package, shipped on tape and reel (4800 pcs/reel)
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
201008094-3
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Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
AP1002BMX-3
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=32A VGS=4.5V, ID=25A
Min. 30 1.2 45 -
Typ. 1.3 1.9 80 29 6.5 14 14 90 36 11 3350 1000 320 1.3
Max. Units 1.8 3 2.35 1 150 ±100 46 5360 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Coss Crss Rg
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
VDS=VGS, ID=250uA VDS=10V, ID=25A VDS=24V, VGS=0V VGS= ±20V, VDS=0V ID=25A VDS=15V VGS=4.5V VDS=16V ID=25A RG= 1.2Ω , VGS= 10 V RD= 0.64Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Drain-Source Leakage Current (T j=125 C) VDS=24V ,VGS=0V
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol IS ISM VSD trr Qrr Parameter
Continuous Source Current (Body Diode)
Test Conditions
1
Min. -
Typ. 55 75
Max. Units 110 250 1 83 113 A A V ns nC
Pulsed Source Current (Body Diode)
Forward On Voltage
2
IS=25A, VGS=0V IS=25A, VGS=0V, dI/dt=100A/µs
-
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by maximum junction temperature. 2.Pulse test 3.Surface mounted on 1 in copper pad of FR4 board. 4.TC measured with thermocouple mounted to top (Drain) of part.
o 5.Starting Tj=25 C, L=0.1mH, RG=25Ω 2
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Typical Electrical Characteristics
240
200
AP1002BMX-3
T A =25 o C
200
ID , Drain Current (A)
160
ID , Drain Current (A)
10V 7.0V 6.0V 5.0V V G =4.0V
T A =150 C
160
o
10V 7.0V 6.0V 5.0V V G =4.0V
120
120
80
80
40
40
0 0.0 1.0 2.0 3.0 4.0
0 0.0 1.0 2.0 3.0 4.0 5.0 6.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3 2
Fig 2. Typical Output Characteristics
I D =25A T A =25°C
2.6
I D =32A V G =10V Normalized RDS(ON)
1.6
RDS(ON) (mΩ )
2.2
1.2
1.8
0.8 1.4
1 2 4 6 8 10
0.4 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance vs. Gate Voltage
1.4
Fig 4. Normalized On-Resistance vs. Junction Temperature
30
1.2
Normalized VGS(th) (V)
20
T j =150 o C
T j =25 o C
1
IS(A)
0.8
10
0.6
0.4
0 0 0.2 0.4 0.6 0.8 1 1.2
0.2 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j ,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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