N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP3R303GMT-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement SO-8...
Description
Advanced Power Electronics Corp.
AP3R303GMT-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement SO-8 Compatible with Heatsink Low On-resistance RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
30V 3.3mΩ 105A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK®5x6 package is specially designed for DC-DC converter applications, with a foot print that is compatible with the popular SO-8 and offers a backside heat sink and lower package profile. S S
D
D
D D
S
G
PMPAK®5x6
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TA=25°C ID at TA=70°C IDM PD at TC=25°C PD at TA=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±20 105 31 25 250 56.8 5
4
Units V V A A A A W W mJ °C °C
Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
28.8 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient
3
Value 2.2 25
Units °C/W °C/W
Ordering Information
AP3R303GMT-HF-3TR RoHS-compliant halogen-free PMPAK®5x6, shipped on tape and reel (3000pcs/reel)
PMPAK is a registered trademark of Advanced P...
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