N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP85U03GH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fas...
Description
Advanced Power Electronics Corp.
AP85U03GH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fast Switching Characteristics Low On-Resistance RoHS-compliant, halogen-free G S D
BV DSS RDS(ON) ID
30V 5.5mΩ 75A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S
D (tab)
TO-252 (H)
The AP85U03GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP85U03GJ-HF-3) is available where a small PCB footprint is required.
G D S
D (tab)
TO-251 (J)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±20 75 56 220 60 0.40
4
Units V V A A A W W/ °C mJ °C °C
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
28.8 -55 to 175 -55 to 175
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient(PCB mount)5
Value 2.5 62.5 110
Unit °C/W °C/W °C/W
Maximum Thermal Resistance, Junction-ambient
Ordering Information
AP85U03GH-HF-3TR : in RoHS-compliant halogen-free TO-252 ship...
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