AP1001BSQ

AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. ▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 6mΩ 15A Description The AP1001BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. The GreenFETTM package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC converters. GreenFETTM D G S D Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ ID@TC=25℃ IDM PD@TA=25℃ PD@TA=70℃ PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 3 4 5 3 3 SQ Rating 30 +20 15 12 59 120 2.2 1.4 34 28.8 24 -40 to 150 -40 to 150 Units V V A A A A W W W mJ A ℃ ℃ Continuous Drain Current, V GS @ 10V4 Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current Storage Temperature Range Operating Junction Temperature Range Single Pulse Avalanche Energy Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case4 Maximum Thermal Resistance, Junction-ambient 3 3.7 58 ℃/W ℃/W 1 201106013 Data and specifications subject to change without notice AP1001BSQ Electrical Characteristics@Tj=25oC(unless otherwise sp...