AP6680BGM-HF-3

Advanced Power Electronics Corp. AP6680BGM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free D BV DSS G S 30V 9mΩ 13.3A RDS(ON) ID Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP6680BGM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. D D D G SO-8 S S S Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 20 16 80 Units V V A A A Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 2.5 0.02 -55 to 150 -55 to 150 W W/°C °C °C Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP6680BGM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 200909091-3 1/5 Advanced Power Electronics Corp. AP6680BGM-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown ...