Document
Advanced Power Electronics Corp.
AP73T03GH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fast Switching Characteristics Low On-Resistance RoHS-compliant, halogen-free G S D
BV DSS RDS(ON) ID
30V 9mΩ 55A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S
TO-252 (H)
The AP73T03GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP73T03GJ-HF-3) is available where a small PCB footprint is required.
G D S
TO-251 (J)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±20 55 39 160 50 0.36 -55 to 175 -55 to 175
Units V V A A A W W/ °C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient(PCB mount)3
Value 3.0 62.5 110
Unit °C/W °C/W °C/W
Maximum Thermal Resistance, Junction-ambient
Ordering Information
AP73T03GH-HF-3TR AP73T03GJ-HF-3TB RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) RoHS-compliant halogen-free TO-251 shipped in tubes
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
201003162-3 1/6
Advanced Power Electronics Corp.
AP73T03GH/J-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2 2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VGS=4.5V, ID=20A VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VGS=±20V, VDS=0V ID=30A VDS=24V VGS=4.5V VDS=15V ID=30A RG=3.3Ω ,VGS=10V RD=0.5Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Min. 30 1 -
Typ. 42 13 2.5 9.5 8 85 20.5 10 700 215 155 1.9
Max. Units 9 16 3 10 ±100 21 1120 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2 2
Test Conditions IS=30A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 23 14
Max. Units 1.2 V ns nC
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 300µs , duty cycle < 2% 3.Surface mounted on 1 in copper pad of FR4 board,
2
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
2/6
Advanced Power Electronics Corp.
Typical Electrical Characteristics
160 100
AP73T03GH/J-HF-3
o
T C =25 o C ID , Drain Current (A)
120
10V 7.0V 6.0V 5.0V ID , Drain Current (A)
T C =175 C
80
10V 7.0V 6.0V 5.0V
60
V G =4.0V
40
80
V G = 4.0V
40
20
0 0 2 4 6 8 10 12
0 0.0 2.0 4.0 6.0 8.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
2.0
I D =20A
11
o T C =25 C
I D =30A V G =10V Normalized RDS(ON)
1.6
RDS(ON) (mΩ )
10
9
1.2
8 0.8
7
6
2 4 6 8 10
0.4 -50 0 50 100 150 200
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance vs. Junction Temperature
1.6
30
IS(A)
20
T j =175 o C
T j =25 o C
Normalized VGS(th) (V)
1.4
1.2
0.8
10
0.4
0 0 0.2 0.4 0.6 0.8 1 1.2
0.0 -50 0 50 100 150 200
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
Typical Electrical Characteristics (cont.)
10 1000
AP73T03GH/J-HF-3
f=1.0MHz
VGS , Gate to Source Voltage (V)
I D =30A
8 800
6
C (pF)
V DS =15V V DS =18V V DS =24V
C iss
600
4
400
2
200
C oss C rss
0 0 4 8 12 16 20 24
.