AP4820GYT-HF-3

Advanced Power Electronics Corp. AP4820GYT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Good Thermal Performance Low On-resistance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 30V 9mΩ 15A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK®3x3 package is specially designed for DC-DC converter applications, with a small foot print that offers a backside heat sink and a low package profile. S S D D D D S G PMPAK®3x3 Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 15 12 60 3.57 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 3 3 Value 4 35 Units °C/W °C/W Maximum Thermal Resistance, Junction-ambient Ordering Information AP4820GYT-HF-3TR RoHS-compliant halogen-free PMPAK®3x3, shipped on tape and reel (3000pcs/reel) PMPAK is a registered trademark of Advanced Power Electronics Corp. ® ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 201009214-3 1/5 Advanced Power Electronics Corp. AP4820GYT-HF-3 Electrical Specifications...