N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP60T03GH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low...
Description
Advanced Power Electronics Corp.
AP60T03GH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge Fast Switching Characteristics RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
30V 12mΩ 45A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S
D (tab) TO-252 (H)
The AP60T03GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP60T03GJ-HF-3) is available where a small PCB footprint is required.
G D S
D (tab) TO-251 (J)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA =25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 30 ±20 45 32 120 44 0.3 2.4 -55 to 175 -55 to 175
Units V V A A A W W/°C W °C °C
Total Power Dissipation Linear Derating Factor Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 3.4 62.5 110
Units °C/W °C/W °C/W
Maximum Thermal Resistance, Junction-ambient
Ordering Information
AP60T03GH-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on ...
Similar Datasheet