Document
AP4800CGM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement
D D D D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G
30V 14mΩ 10.4A
▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
SO-8
S S S
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 +20 10.4 8.4 40 2.5 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 50
Unit ℃/W 1 200912082
Data and specifications subject to change without notice
AP4800CGM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=9A VGS=4.5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
Min. 30 1 -
Typ. 14.5 7.5 1.8 5 7 7 17 5 450 120 95 1.5
Max. Units 14 22 3 10 +100 12 720 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω
VDS=VGS, ID=250uA VDS=10V, ID=9A VDS=30V, VGS=0V VGS=+20V, VDS=0V ID=9A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2 2
Test Conditions IS=2.1A, VGS=0V IS=9A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 20 11
Max. Units 1.2 V ns nC
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNC.