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AP40T03GJ-HF-3 Dataheets PDF



Part Number AP40T03GJ-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP40T03GJ-HF-3 DatasheetAP40T03GJ-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP40T03GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 30V 25mΩ 28A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252 (H) The AP40T03GH-HF-3 is in the TO-252 package which is widely preferred for commercial and indus.

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Advanced Power Electronics Corp. AP40T03GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 30V 25mΩ 28A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252 (H) The AP40T03GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP40T03GJ-HF-3) is available where a small PCB footprint is required. G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±25 28 24 95 31.25 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient(PCB mount)3 Value 4 62.5 Unit °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient 110 Ordering Information AP40T03GH-HF-3TR AP40T03GJ-HF-3TB RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) RoHS-compliant halogen-free TO-251 shipped in tubes ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 200811034-3 1/6 Advanced Power Electronics Corp. AP40T03GH/J-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS ∆ BVDSS/∆ Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 - Typ. 0.032 Max. Units - V V/°C Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A VGS=4.5V, ID=14A 20 4 1.5 2.3 6 30 10 3 270 70 50 25 45 3 1 25 ±100 7 430 - mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=30V, VGS=0V VGS= ±25V, VDS=0V ID=18A VDS=20V VGS=4.5V VDS=15V ID=18A RG=3.3Ω, V GS=10V RD=0.83Ω VGS=0V VDS=25V f=1.0MHz Drain-Source Leakage Current (T j=150 C) VDS=24V, VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 28 95 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25°C, IS=28A, VGS=0V Notes: 1.Puls.


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