Document
Advanced Power Electronics Corp.
AP40T03GH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
30V 25mΩ 28A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S
TO-252 (H)
The AP40T03GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP40T03GJ-HF-3) is available where a small PCB footprint is required.
G D S
TO-251 (J)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±25 28 24 95 31.25 0.25 -55 to 150 -55 to 150
Units V V A A A W W/ °C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient(PCB mount)3
Value 4
62.5
Unit °C/W °C/W °C/W
Maximum Thermal Resistance, Junction-ambient
110
Ordering Information
AP40T03GH-HF-3TR AP40T03GJ-HF-3TB RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) RoHS-compliant halogen-free TO-251 shipped in tubes
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
200811034-3 1/6
Advanced Power Electronics Corp.
AP40T03GH/J-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS
∆ BVDSS/∆ Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
2
Min. 30 1 -
Typ. 0.032
Max. Units -
V
V/°C
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=18A VGS=4.5V, ID=14A
20 4 1.5 2.3 6 30 10 3 270 70 50
25 45 3 1 25 ±100 7 430 -
mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=30V, VGS=0V VGS= ±25V, VDS=0V ID=18A VDS=20V VGS=4.5V VDS=15V ID=18A RG=3.3Ω, V GS=10V RD=0.83Ω VGS=0V VDS=25V f=1.0MHz
Drain-Source Leakage Current (T j=150 C) VDS=24V, VGS=0V
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.3V
1
Min. -
Typ. -
Max. Units 28 95 1.3 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25°C, IS=28A, VGS=0V
Notes:
1.Puls.