Document
Advanced Power Electronics Corp.
AP2316GN-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge Surface Mount Device RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
30V 42mΩ 4.7A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP2316GN-HF-3 is in the popular SOT-23 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches.
D
S SOT-23 G
Absolute Maximum Ratings
Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 + 20 4.7 3.7 10 1.38 -55 to 150 -55 to 150
Units V V A A A W °C °C
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit °C/W
Ordering Information
AP2316GN-HF-3TR RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
201008182-3
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Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA
AP2316GN-HF-3
Min. 30 1 -
Typ. 0.02 5 5 1 3 7 8 12 3 270 70 60 1.4
Max. Units 42 72 3 1 10 ±100 8 430 2.1 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
∆ BV DSS/∆ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance
VGS=10V, ID=4A VGS=4.5V, ID=2A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=30V, VGS=0V VDS=24V,VGS=0V, TJ=70°C VGS=±20V ID=4A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3Ω, VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=1.2A, VGS=0V IS=4A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 14 9
Max. Units 1.2 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1. Pulse width limited by maximum junction temperature. 2. Pulse test - pulse width < 300µs , duty cycle < 2%
2 3. Surface mounted on 1in copper pad of FR4 board, t <10sec; 270°C/W when mounted on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Typical Electrical Characteristics
12 12
AP2316GN-HF-3
T A =25 C ID , Drain Current (A)
o
8
ID , Drain Current (A)
10V 7.0V 5.0V 4.5V
T A = 150 C
o
10 V 7.0 V 5.0 V 4.5 V
8
V G = 3.0 V
4
4
V G = 3.0 V
0 0 1 2 3 4
0 0 1 2 3 4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
65 1.8
Fig 2. Typical Output Characteristics
ID=2A
o T A =25 C
55 1.5
ID=4A V G =10V Normalized RDS(ON)
RDS(ON) (mΩ )
45
1.2
35
0.9
25 2 4 6 8 10
0.6 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3.
4.0
On-Resistance vs. Gate Voltage
1.8
Fig 4. Normalized On-Resistance vs. Junction Temperature
T j =150 o C
2.0
T j =25 o C
Normalized VGS(th) (V)
1.2
3.0
1.4
IS(A)
1.0
1.0
0.6
0.0 0 0.2 0.4 0.6 0.8 1
0.2 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Typical Electrical Characteristics (cont.)
AP2316GN-HF-3
f=1.0MHz
1000
10
VGS , Gate to Source Voltage (V)
I D =4A
8
6
C (pF)
V DS =15V V DS =20V V DS =24V
C iss
100
4
C oss C rss
2
0 0 2 4 6 8
10 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
100
Fig 8. Typical Capacitance Characteristics
1
Duty f.