N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP2604GY-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Ga...
Description
Advanced Power Electronics Corp.
AP2604GY-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge Low On-resistance RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
30V 45mΩ 5.5A
Description
S
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D D G D D
The SOT-26 package is widely used for commercial and industrial applications, where space is at a premium.
SOT-26
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±20 5.5 4.4 20 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/ °C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 62.5 Unit °C/W
Ordering Information
AP2604GY-HF-3TR : in RoHS-compliant halogen-free SOT-26 shipped on tape and reel (3000pcs/reel)
©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com
201201062-3 1/5
Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
AP2604GY-HF-3
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=4.8A VGS=4.5V, ID...
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