Document
Advanced Power Electronics Corp.
AP20T03GH/J-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant G S D
BV DSS R DS(ON) ID
30V 50mΩ 12.5A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S
TO-252 (H)
The AP20T03GH-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP20T03GJ-3) is available where a small PCB footprint is required.
G D S
TO-251 (J)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±20 12.5 8 40 12.5 0.1 -55 to 150 -55 to 150
Units V V A A A W W/ °C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient(PCB mount)3
Value 10
62.5
Unit °C/W °C/W °C/W
Maximum Thermal Resistance, Junction-ambient
110
Ordering Information
AP20T03GH-3TR AP20T03GJ-3TB RoHS-compliant TO-252 shipped on tape and reel (3000 pcs/reel) RoHS-compliant TO-251 shipped in tubes
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Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS
∆ BVDSS/∆ Tj
AP20T03GH/J-3
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
2
Min. 30 1 -
Typ. 0.02
Max. Units -
V
V/°C
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=8A VGS=4.5V, ID=5A
6 4 1.5 2.3 6 30 10 3 270 70 50 1.6
50 80 3 1 250 ±100 7 430 2.4
mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
VDS=VGS, ID=250uA VDS=5V, ID=5A VDS=30V, VGS=0V VGS= ±20V, VDS=0V ID=10A VDS=24V VGS=4.5V VDS=15V ID=10A RG=3.3Ω, V GS=10V RD=1.5Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Drain-Source Leakage Current (T j=125 C) VDS=24V, VGS=0V
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2 2
Test Conditions IS=5A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 16 9
Max. Units 1.3 V ns nC
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 300µs , duty cycle < 2% 3.Surface mounted on 1 in copper pad of FR4 board,
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
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Advanced Power Electronics Corp.
Typical Electrical Characteristics
20
18
AP20T03GH/J-3
18
T C =25 C
o
16
ID , Drain Current (A)
14
ID , Drain Current (A)
10V 7.0V 5.0V 4.5V
16
o TC=150 C
14
12
10V 7.0V 5.0V 4.5V
12
10
10
8
8
6
6
4
4
V G =3.0V
2
2
V G =3.0V
0 0.0 0.5 1.0 1.5 2.0 2.5
0
0
1
1
2
2
3
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
75 1.8
Fig 2. Typical Output Characteristics
ID=5A T C =25 o C
1.5 65
I D =8A V G =10V Normalized RDS(ON)
RDS(ON)(mΩ)
1.3
55
1.0
45 0.8
35 2 4 6 8 10
0.5 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance vs. Gate Voltage
10 2.5
Fig 4. Normalized On-Resistance vs. Junction Temperature
8
2.0 6
T j =150 o C
4
T j =25 o C
VGS(th) (V)
1.5 1.0
Is (A)
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j ,Junction Temperature ( o C)
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
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Advanced Power Electronics Corp.
Typical Electrical Characteristics (cont.)
14
AP20T03GH/J-3
f=1.0MHz
1000
I D = 10 A
12
VGS , Gate to.