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AP20T03GJ-3 Dataheets PDF



Part Number AP20T03GJ-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP20T03GJ-3 DatasheetAP20T03GJ-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP20T03GH/J-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant G S D BV DSS R DS(ON) ID 30V 50mΩ 12.5A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252 (H) The AP20T03GH-3 is in the TO-252 package which is widely preferred for commercial and industrial surface moun.

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Advanced Power Electronics Corp. AP20T03GH/J-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant G S D BV DSS R DS(ON) ID 30V 50mΩ 12.5A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252 (H) The AP20T03GH-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP20T03GJ-3) is available where a small PCB footprint is required. G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 12.5 8 40 12.5 0.1 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient(PCB mount)3 Value 10 62.5 Unit °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient 110 Ordering Information AP20T03GH-3TR AP20T03GJ-3TB RoHS-compliant TO-252 shipped on tape and reel (3000 pcs/reel) RoHS-compliant TO-251 shipped in tubes ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 200902104-3 1/6 Advanced Power Electronics Corp. Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS ∆ BVDSS/∆ Tj AP20T03GH/J-3 Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 - Typ. 0.02 Max. Units - V V/°C Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A VGS=4.5V, ID=5A 6 4 1.5 2.3 6 30 10 3 270 70 50 1.6 50 80 3 1 250 ±100 7 430 2.4 mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=250uA VDS=5V, ID=5A VDS=30V, VGS=0V VGS= ±20V, VDS=0V ID=10A VDS=24V VGS=4.5V VDS=15V ID=10A RG=3.3Ω, V GS=10V RD=1.5Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Drain-Source Leakage Current (T j=125 C) VDS=24V, VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=5A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs Min. - Typ. 16 9 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 300µs , duty cycle < 2% 3.Surface mounted on 1 in copper pad of FR4 board, THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/6 Advanced Power Electronics Corp. Typical Electrical Characteristics 20 18 AP20T03GH/J-3 18 T C =25 C o 16 ID , Drain Current (A) 14 ID , Drain Current (A) 10V 7.0V 5.0V 4.5V 16 o TC=150 C 14 12 10V 7.0V 5.0V 4.5V 12 10 10 8 8 6 6 4 4 V G =3.0V 2 2 V G =3.0V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0 1 1 2 2 3 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 75 1.8 Fig 2. Typical Output Characteristics ID=5A T C =25 o C 1.5 65 I D =8A V G =10V Normalized RDS(ON) RDS(ON)(mΩ) 1.3 55 1.0 45 0.8 35 2 4 6 8 10 0.5 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage 10 2.5 Fig 4. Normalized On-Resistance vs. Junction Temperature 8 2.0 6 T j =150 o C 4 T j =25 o C VGS(th) (V) 1.5 1.0 Is (A) 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage vs. Junction Temperature ©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/6 Advanced Power Electronics Corp. Typical Electrical Characteristics (cont.) 14 AP20T03GH/J-3 f=1.0MHz 1000 I D = 10 A 12 VGS , Gate to.


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