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AP60T06GP-HF Dataheets PDF



Part Number AP60T06GP-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP60T06GP-HF DatasheetAP60T06GP-HF Datasheet (PDF)

AP60T06GP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 55V 12mΩ 46A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-indus.

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AP60T06GP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 55V 12mΩ 46A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 55 +20 46 29 160 44.6 2 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 2.8 62 Units ℃/W ℃/W 1 201101181 Data and specifications subject to change without notice AP60T06GP-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=44V, VGS=0V VGS= +20V, VDS=0V ID=20A VDS=48V VGS=10V VDS=30V ID=20A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min. 55 2 - Typ. 26 28 6.5 13 11.5 42 20 8 240 140 1 Max. Units 12 5 25 +100 45 2 V mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1380 2200 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=30A, VGS=0V IS=20A, VGS=0V dI/dt=100A/µs Min. - Typ. 38 55 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP60T06GP-HF 160 120 T C = 25 C o 10V 9.0V 8.0V ID , Drain Current (A) 80 T C = 150 C o 10V 9.0V 8.0V 7.0V ID , Drain Current (A) 120 7.0V 80 V GS =6.0V 40 V GS =6.0V 40 0 0 5 10 15 0 0 4 8 12 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.4 I D =1mA 2.0 I D =30A V G =10V Normalized RDS(ON) Normalized BVDSS (V) 1.1 1.6 1 1.2 0.9 0.8 0.8 -50 0 50 100 150 0.4 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Temperature 40 2.0 Fig 4. Normalized On-Resistance v.s. Junction Temperature I D =1mA 1.6 30 Normalized VGS(th) (V) 1.4 IS(A) 1.2 T j =150 o C 20 T j =25 o C 0.8 10 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP60T06GP-HF 12 2000 f=1.0MHz VGS , Gate to Source Voltage (V) 10 I D =20A V DS =30V V DS =36V V DS =48V C (pF) 1600 C iss 1200 8 6 800 4 400 2 C oss C rss 1 5 9 13 17 21 25 29 0 0 10 20 30 40 0 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 100 Operation in this area limited by RDS(ON) Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 ID (A) 100us 10 0.1 0.1 1ms 10ms 100ms DC 0.05 PDM t 0.02 0.01 1 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C T c =25 C Single Pulse 0.1 o Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 .


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