ME12N04

ME12N04/ME12N04-G N- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME12N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)=28mΩ@VGS=10V (N-Ch) ● RDS(ON)=52mΩ@VGS=4.5V (N-Ch) ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-252-3L) Top View e Ordering Information: ME12N04 (Pb-free) ME12N04-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case* *The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDS VGS TC=25℃ TC=70℃ ID IDM TC=25℃ TC=70℃ PD TJ RθJA RθJC Maximum Ratings 40 ±25 22 18 80 25 16 -55 to 150 42 5 U...