N-Channel MOSFET
Advanced Power Electronics Corp.
AP9475GM-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate ...
Description
Advanced Power Electronics Corp.
AP9475GM-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant
D
BV DSS RDS(ON)
G S
60V 40mΩ 6.9A
ID
Description
D
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9475GM-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.
D D D G
SO-8
S S
S
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 60 ±25 6.9 5.5 30
Units V V A A A
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
2.5
0.02 -55 to 150 -55 to 150
W
W/°C °C °C
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W
Ordering Information
AP9475GM-3TR RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com
200812232-3
1/5
Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA
2
AP9475GM-3
...
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