This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD2693, 2SD2693A
Silicon NPN triple ...
This product complies with the RoHS Directive (EU 2002/95/EC).
Power
Transistors
2SD2693, 2SD2693A
Silicon
NPN triple diffusion planar type
For power amplification Complementary to 2SB1724, 2SB1724A ■ Features
Wide safe oeration area Satisfactory linearity of forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw.
15.0±0.5
Unit: mm
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
φ 3.2±0.1
13.7±0.2 4.2±0.2 Solder Dip
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) (Base open) Collector current Peak collector current
*
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.1
Symbol 2SD2693 2SD2693A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C 2SD2693A VCBO
Rating 60 80 60 80 6 3 5 25 2.0 150 −55 to +150
Unit V V
0.55±0.15
Collector-emitter voltage 2SD2693 Emitter-base voltage (Collector open)
2.54±0.30 5.08±0.50 1 2 3
V A A W °C °C
1: Base 2: Collector 3: Emitter TO-220D-A1 Package
Collector power dissipation Junction temperature Storage temperature
Internal Connection
C B E
Note) *: Non-repetitive peak collector current
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open)
*1
Symbol 2SD2693 2SD2693A 2SD2693A 2SD2693 2SD2693A 2SD2693 ICES IEBO hFE1
*2
Conditions IC = 30 mA, IB = 0
Min 60 80
Typ
Max
Unit V
VCEO
Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Collector-emit...
