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AP2310GG-HF Dataheets PDF



Part Number AP2310GG-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-Channel MOSFET
Datasheet AP2310GG-HF DatasheetAP2310GG-HF Datasheet (PDF)

AP2310GG-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 60V 90mΩ 2.7A S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. SOT-89 D G S Absolute Maximum Ratings Symbol VDS.

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AP2310GG-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 60V 90mΩ 2.7A S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. SOT-89 D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 3 Rating 60 +20 2.7 2.2 10 1.25 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 100 Unit ℃/W Data and specifications subject to change without notice 1 201010121 AP2310GG-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=2.5A VGS=4.5V, ID=1.5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Total Gate Charge 2 2 Min. 60 1 - Typ. 7 6.5 1.5 3.5 5 5 17 4 550 70 50 Max. Units 90 120 3 10 +100 10.5 880 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=250uA VDS=10V, ID=2.5A VDS=48V, VGS=0V VGS=+20V, VDS=0V ID=2.5A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=15V f=1.0MHz Drain-Source Leakage Current Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1A, VGS=0V IS=2A, VGS=0V, dI/dt=100A/µs Min. - Typ. 23 23 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mount on FR4 board, t < 10s. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2310GG-HF 10 10 T A =25 C 8 o ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V T A =150 C 8 o 10V 7.0V 5.0V 4.5V 6 6 V GS =3.0V 4 V GS = 3.0V 4 2 2 0 0 2 4 6 8 0 0 2 4 6 8 V DS .


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