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AP95T07BGS-HF-3 Dataheets PDF



Part Number AP95T07BGS-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-Channel MOSFET
Datasheet AP95T07BGS-HF-3 DatasheetAP95T07BGS-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP95T07BGP/S-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 75V 5mΩ 80A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP95T07BGS-HF-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount appli.

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Advanced Power Electronics Corp. AP95T07BGP/S-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 75V 5mΩ 80A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP95T07BGS-HF-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. The AP95T07BGP-HF-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required. G D S D (tab) TO-263 (S) D (tab) G D Absolute Maximum Ratings Symbol VDS VGS ID at TC =25°C ID at TC =25°C ID at TC =100°C IDM PD@TC=25°C PD@TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 S TO-220 (P) Units V V A A A A W W °C °C Rating 75 ± 20 125 100 78 400 138.9 2 -55 to 150 -55 to 150 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 0.9 40 62 Unit °C/W °C/W °C/W Maximum Thermal Resistance, Junction-ambient Ordering Information AP95T07BGS-HF-3TR : in RoHS-compliant halogen-free TO-263, shipped on tape and reel (800 pcs/reel) AP95T07BGP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube) ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 201112071-3 1/6 Advanced Power Electronics Corp. AP95T07BGP/S-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=60A VDS=VGS, ID=250uA VDS=10V, ID=60A VDS=60V, VGS=0V VGS=± 20V, VDS=0V ID=40A VDS=60V VGS=10V VDS=40V ID=40A RG=1Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz Min. 75 2 - Typ. 90 96 25 40 20 70 37 15 700 340 1.3 Max. Units 5 5 25 ± 100 154 2.6 V mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω 5100 8160 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=40A, VGS=0V IS=10A, VGS=0V dI/dt=100A/µs Min. - Typ. 55 110 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test 3.Package limitation current is 100A, calculated continuous current based on maximum allowable junction temperature is 125A. 4.Surface-mounted on 1in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/6 Advanced Power Electronics Corp. Typical Electrical Characteristics 300 AP95T07BGP/S-HF-3 200 T C = 25 C 250 o 10V 8.0V 7.0V ID , Drain Current (A) T C = 150 C 160 o ID , Drain Current (A) 10V 8.0V 7.0V 6.0V 200 120 6.0V 150 80 V GS =5.0V 100 V GS =5.0V 50 40 0 0 8 16 24 32 0 0 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1.6 2.4 Fig 2. Typical Output Characteristics I D =1mA 1.4 2.0 I D =60A V G =10V Normalized RDS(ON) Normalized BVDSS (V) 1.2 1.6 1 1.2 0.8 0.8 0.6 0.4 -50 0 50 100 150 0.4 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C) Fig 3. Normalized BVdss vs. Junction Temperature 40 1.6 Fig 4. Normalized On-Resistance vs. Junction Temperature I D =1mA Normalized VGS(th) (V) 30 1.2 IS(A) T j =150 o C 20 T j =25 o C 0.8 10 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/6 Advanced Powe.


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