AP75N07GP

AP75N07GP/S Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 75V 11mΩ 80A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP75N07GP) are available for low-profile applications. G D S G D S TO-220(P) TO-263(S) Units V V A A A W W/ ℃ mJ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 75 ±20 80 56 300 156 1.25 450 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.8 62 Units ℃/W ℃/W Data & specifications subject to change without notice 200519062-1/4 AP75N07GP/S Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o...