AP75N07GW-HF-3

Advanced Power Electronics Corp. AP75N07GW-HF-3 N-channel Enhancement-mode Power MOSFET Low Gate Charge Simple Drive Requirement Fast Switching Characteristics G S D BV DSS R DS(ON) ID 75V 11mΩ 90A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP75N07GW-HF-3 is in the TO-3P through-hole package which is widely used in higher power commercial and industrial applications where an attached heatsink is required. This device is well suited for use in applications such as motor drives, inverteers and DC/DC converters. G D S TO-3P (W) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 4 Rating 75 ±20 90 70 360 250 2 3 Units V V A A A W W/ °C mJ °C/W °C/W Continuous Drain Current Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 450 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.5 40 Units °C/W °C/W Ordering Information AP75N07GW-HF-3TB RoHS-compliant, halogen-free TO-3P, shipped in tubes ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 200902232-3 1/5 Advanced Power Electronics Corp. AP75N07GW-HF...